NETFISiC – Formation de jeunes chercheurs internationaux dans le domaine des semi-conducteurs. Amélioration des performances du carbure de silicium / Training of international young researchers on various semiconductor related fields taking the emerging SiC technology as an appropriate tool for study


Fiche  technique du Projet

• Programme: FP7 – People – “ Initial Training Network”
• Coordinator: Université Claude Bernard Lyon 1, Dr. Gabriel FERRO
• Partners:
• Université Claude Bernard Lyon 1 (FR)
• Linköpings Universitet (SE)
• Institut Polytechnique de Grenoble (FR)
• Novasic SA (FR)
• Friedrich-Alexander-Universität Erlangen-Nürnberg (GE)
• Aristotelio Panepistimio Thessalonikis (GR)
• Centre National de la Recherche Scientifique (FR)
•  ilniaus Universitetas (LT)
• Agencia Estatal Consejo Superior de Investigaciones Cientificas (SP)
• Acreo AB (SE)
• Consiglio Nazionale delle Ricerche (IT)
• Infineon Technologies AG (GE)

• Total Budget: € 3.470.327
• Total Grant : € 3.470.327
• Duration : 2011-2015
• Website :  www.netfisic.eu

Context / Contexte

Silicon carbide (SiC), due to its chemical and physical properties and large band gap, is an interesting material for the fabrication of electronic devices that have to work at high power, high temperature and/or in aggressive environments with major applications in energy saving. However, the lower maturity of the SiC technology and material cost, as compared to Silicon, limit the yield and the cost/performance ratio of device manufacturing. The next major improvements of SiC devices are expected to come from a better control of metal/SiC (e.g. for Schottky diodes) and SiO2/SiC (e.g. for MOSFET) interfaces.

Objectives / objectifs

The main scientific objective of NetFISiC is to provide Silicon carbide material (of variouspolytypes) with improved and adequate functional interfaces for getting a step forward in electronic devices performance. Research efforts will be dedicated to solve the problems faces by important devices like MOSFET and Schottky diodes. Moreover, some fundamental research will be performed both on the growth aspect and on new and innovating devices. Applications in high temperature, high power and harsh environment are targeted. Based on this research program, the ambitious target of NETFISiC is to train the next generation of researchers on various semiconductor related fields (such as physics, material science and engineering), taking the emerging SiC technology as an appropriate tool for study. This shall contribute to long-term strengthening of the European position on a technologically important semiconductor. 13 ESRs and 2 ERs will be recruited and trained within this network, on multi-disciplinary subjects like material growth, characterization and devices fabrication, with a particular focus on SiC.

Impact/ results – Impact/résultats

NETFISiC aims at contributing to the long-term strengthening of the European position on a technologically important semiconductor field. It is well known that the current SiC technology has been demonstrated to be suitable for high power applications. This shall contribute significantly to save the environment since the main added value of SiC electronics is energy saving by the reduction of: energy loss during switching, fuel consumption in transportation, weight of passive filter components, i.e. inductors, capacitors. This will reduce CO2 emission.

Role of LIP

LIP is involved in the project from the setting up phase. LIP is a Third Party of the coordinator (Université Claude Bernard Lyon 1). Lip’s role is to support the coordinator in the financial administrative management of the network. LIP is also in charge of the update of the project web site.